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PD - 9.1308A
PRELIMINARY
IRLZ34NS
HEXFET(R) Power MOSFET
D
Logic-Level Gate Drive Advanced Process Technology l Surface Mount l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
VDSS = 55V
G S
RDS(on) = 0.035 ID = 27A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D 2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
D 2 Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
27 19 110 56 0.37 16 110 16 5.6 10 -55 to + 175 300 (1.6mm from case)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mount,steady-state)**
Min.
---- ----
Typ.
---- ----
Max.
2.7 40
Units
C/W
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11/11/96
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IRLZ34NS
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss
Min. 55 --- --- --- --- 1.0 11 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.065 --- --- --- --- --- --- --- --- --- --- --- --- 8.9 100 29 21
Max. Units Conditions --- V VGS = 0V, I D = 250A --- V/C Reference to 25C, I D = 1mA 0.035 VGS = 10V, ID = 16A 0.046 VGS = 5.0V, I D = 16A 0.060 VGS = 4.0V, I D = 14A 2.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 16A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 16V nA -100 VGS = -16V 25 ID = 16A 5.2 nC VDS = 44V 14 V GS = 5.0V, See Fig. 6 and 13 --- VDD = 28V --- I D = 16A ns --- RG = 6.5, VGS = 5.0V --- RD = 1.8, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 880 --- VGS = 0V 220 --- pF VDS = 25V 94 --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD t rr Q rr t on
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions MOSFET symbol --- --- 27 showing the A G integral reverse --- --- 110 p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 16A, VGS = 0V --- 76 110 ns TJ = 25C, IF = 16A --- 190 290 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
D
S
Specification changes
Rev. #
1
Parameters Old spec.
VGS (Max.) 20
New spec.
16
Comments
Decrease VGS ( Max). Specification
Revision Date
5/1/96
Notes: Repetitive rating; pulse width limited by ISD 16A, di/dt 270A/s, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) TJ 175C VDD = 25V, starting TJ = 25C, L = 610H Pulse width 300s; duty cycle 2%. RG = 25, IAS = 16A. (See Figure 12) Uses IRLZ34N data and test conditions ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994.
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IRLZ34NS
1000
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOT TOM 2.5V TOP
1000
ID , D ra in -to -S o u rc e C u rre n t (A )
100
ID , D ra in -to -S o u rc e C u rre n t (A )
100
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
10
2.5 V
1
1
2.5 V
0.1 0.1 1
2 0 s PU LSE W ID TH T J = 25 C
10
100
A
0.1 0.1 1
2 0 s PU L SE W ID TH T J = 1 75 C
10
100
A
V D S , Drain-to-S ource V oltage (V)
V D S , Drain-to-S ource Voltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d )
I D = 2 7A
I D , D r ain- to-S ourc e C urre nt (A )
2.5
100
TJ = 2 5 C TJ = 1 7 5 C
10
2.0
1.5
1.0
1
0.5
0.1 2 3 4 5 6
V DS = 2 5 V 2 0 s P U L SE W ID TH
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 10 V
100 120 140 160 180
A
V G S , Ga te-to-S o urce V oltage (V )
T J , Junction T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRLZ34NS
1400 15
V G S , G a te -to -S o u rce V o lta g e (V )
1200
V GS C is s C rss C i ss C oss
= 0 V, f = 1M H z = C gs + C gd , Cds SH OR TE D = C gd = C d s + C gd
I D = 16A V DS = 44V V DS = 28V
12
C , C a p a c ita n c e (p F )
1000
800
9
C os s
600
6
400
C rs s
200
3
0 1 10 100
A
0 0 4 8 12 16
FO R TEST CIR CU IT SEE FIG UR E 13
20 24 28 32
A
V D S , D rain-to-S ource Voltage (V )
Q G , T otal Gate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
I S D , R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n)
100
I D , D ra in C u rre n t (A )
100 10 s
T J = 17 5C TJ = 2 5C
10
1 00s 10 1m s
1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VG S = 0 V
1.8
A
1 1
T C = 25 C T J = 17 5C S ing le Pulse
10
10m s
2.0
A
100
V S D , S ource-to-Drain Voltage (V )
V D S , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRLZ34NS
30
VDS
25
RD
VGS RG
I D , D ra in C u rre n t (A m p s)
D.U.T.
+
20
-VDD
5.0V
15 Pulse Width 1 s Duty Factor 0.1 %
10
Fig 10a. Switching Time Test Circuit
VDS 90%
5
0 25 50 75 100 125 150
A
175
TC , C ase T em perature (C )
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
10
Therm al Response (Z thJC )
D = 0.5 0 1 0.2 0 0 .1 0 0.05 0.1 0.02 0.01 S IN G LE P U LS E (TH E R M A L R E S P O NS E )
PD M
t
1 t2
N o te s : 1 . D u ty fac to r D = t
1
/ t2
0.01 0.00001
2 . P e a k T J = P D M x Z th J C + T C
A
1
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLZ34NS
VDS D.U.T. RG + V - DD
5.0 V
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
L
250
TOP
200
BO TTOM
ID 6 .6A 11A 16 A
IAS tp
0.01
150
100
Fig 12a. Unclamped Inductive Test Circuit
50
V(BR)DSS tp VDD VDS
0
V D D = 2 5V
25 50 75 100 125 150
A
175
Starting TJ , Junction T emperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRLZ34NS
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRLZ34NS
D2Pak Package Details
10.54 (.415) 10.29 (.405) 1.40 (.055) MA X. -A2 4.69 (.185) 4.20 (.165) -B 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 1.40 (.055) 1.14 (.045) 3X 5.08 (.200) 1.39 (.055) 1.14 (.045) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) R EF . 10.16 (.400) R EF .
1.78 (.070) 1.27 (.050)
1
3
3X
0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM
0.55 (.022) 0.46 (.018)
M IN IM U M R EC OM M EN D ED F OOT PR IN T 11.43 (.450)
N OT ES: 1 D IME NS IO N S AF TE R SO LD ER D IP. 2 D IME NS IO N IN G & T OLER AN C IN G PER AN SI Y14.5M, 1982. 3 C ON T RO LLIN G D IM ENS IO N : IN CH . 4 H EA TSIN K & LEA D D IM E N SIO NS DO NO T INC LU D E BU R R S.
TRR
1 . 6 0 (.0 6 3 ) 1 . 5 0 (.0 5 9 ) 4 .1 0 (. 1 6 1 ) 3 .9 0 (. 1 5 3 )
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5) 0 .3 4 2 (.0 1 3 5)
LE AD ASSIGN M EN T S 1 - GAT E 2 - D RA IN 3 - SOU R C E
8.89 (.350) 17.78 (.700)
3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X
F E ED D IR E C T IO N
1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
Part Marking
(This is an IRF530S with assembly lot code 9B1M )
A
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TRL
10 . 90 (. 42 9 ) 10 . 70 (. 42 1 ) 1 .7 5 (. 06 9 ) 1 .2 5 (. 04 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F EE D D IR EC T IO N
Tape & Reel
13 .5 0 (.5 32 ) 12 .8 0 (.5 04 ) 2 7.4 0 (1. 07 9 ) 2 3.9 0 (.9 41 )
4
IN TE RN A TIO N A L R E C TIFIE R LO G O ASSEMBLY L OT C OD E
PART NUMBER F 53 0 S 9 24 6 9B 1M
D A TE C O DE (YY W W ) Y Y = Y EA R W W = W EEK
33 0 .00 (1 4 .1 73 ) M A X.
6 0.0 0 (2 .3 62 ) M IN .
N O TES : 1 . C OM F OR M S TO EI A-4 18 . 2 . C ON TR OL L IN G D IM EN S IO N : M IL L IM ETE R . 3 . D IM E NS IO N M E AS U R ED @ H U B . 4 . IN C L U D ES FL AN GE D IS TOR T ION @ O U TE R E D GE .
2 6 .4 0 (1 .0 3 9) 2 4 .4 0 (. 96 1 )
3 0 .4 0 (1 .1 9 7) M A X. 4
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 11/96
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